Electronics Research Laboratory
Dept. of Microelectronics

prof.dr. L.C.N. de Vreede

Professor, Chairman
Electronic Circuits and Architectures (ELCA), Department of Microelectronics

Expertise: RF, Microwave, Power Amplifiers, Device Characterization & modeling

Themes: Big-data on-chip transmission, Microwave circuits, RF electronics, Space electronics systems

Biography

Leo C. N. de Vreede was born in Delft, the Netherlands in 1965. He received his Ph.D. degree (cum laude) from the Delft University of Technology in 1996. In 1988, he joined the Laboratory of Telecommunication and Remote Sensing Technology of the Department of Electrical Engineering, Delft University of Technology. In 1996, he was appointed as an assistant professor at the Delft University of Technology, working on the nonlinear distortion behavior of bipolar transistors at the Delft Institute of Microelectronics and Submicron Technology (DIMES). In the winter season of 98-99, he was a guest of the high-speed device group at the University of San Diego, California.

In 1999 and 2015, he was appointed as an associate professor and, respectively, full professor at the Delft University of Technology and became responsible for the Microwave Components Group and the Electronics Research Laboratory. Since then, he worked on RF solutions for improved linearity and RF performance at the device, circuit, and system levels. He is a co-founder/advisor of Anteverta-mw, a company specializing in RF device characterization. He is (co)recipient of the IEEE Microwave Prize in 2008, mentor of the Else Kooi Prize awarded Ph.D. work in 2010, and mentor of the Dow Energy dissertation prize awarded Ph.D. work in 2011. Recipient of the TUD Entrepreneurial Scientist Award 2015. He (co)guided several students who won (best) paper awards at the BCTM, PRORISC, GAAS, ESSDERC, ISOCC, IMS, RFIT, and RFIC. He (co)authored more than 170 IEEE refereed conference and journal papers and holds over 20 patents. His current interests include RF measurement systems, technology optimization, and circuit/system concepts for wireless systems.

Announcement: Open Ph.D. position on “The design of digital-intensive transmitters for 6G applications.” This Ph.D. project targets advanced, fully integrated digital transmitters (DTX) for 6G mobile communication networks operating in the urban extreme capacity 7-to-20GHz band. The focus is on identifying new DTX architectures that meet the stringent requirements regarding operating frequency, bandwidth, spectral purity, and RF output power of the 6G standard. You will design novel CMOS/SOI-based DTX solutions for future “extreme massive multiple-input multiple-output” (XMIMO) wireless systems. You will work in the ELCA research group of the TU Delft and will be guided by Dr. Morteza Alavi and Prof. Leo de Vreede.

If you have knowledge of RF, mixed-signal, digital design, experience with ADS and Cadence, and are interested in this position, please submit your resume to Dr. Morteza Alavi (S.M.Alavi@tudelft.nl) and/or Leo de Vreede (L.C.N.deVreede@tudelft.nl).

 

 

EE4605 Integrated circuits and systems for wireless applications

Design and analysis of typical RF IC building blocks in a wireless transceiver

EE4C10 Analog circuit design fundamentals

EE4C13 Wireless systems for electrical engineering applications

Commonly used RF electronics architectures in wireless systems, with the requirements on their building blocks.

Education history

EE4600 Wireless Concepts and Systems

(not running) Basic concepts of RF design, such as noise, nonlinearity, Impedance Matching, Analog/Digital Modulation, Pulse-shaping, Mixer, Oscillator, Link-budget, Transmitter/Receiver Architectures

Digital tRAnSmitTer ICs

This project aims to develop DTX ICs for highly-integrated and energy-efficient mMIMO base stations.

Energy Efficient Wideband Transmitter, NXP Partnership ‘Advanced 5G Solutions’

This project providing enhanced average efficiency in wideband wireless transmitters while withstanding the changing load conditions that can occur in handheld devices and MIMO/smart-antenna communication systems.

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

smart Everything everywhere Access to content through Small cells Technologies

EAST is focused on the development of Small cell technologies for 5G applications up to 6 GHz

Integrated Near Field sensOrs for high Resolution MicrowavE spectRoscopy

The goal of this project is the creation of a new class of sensors, enabling fast and accurate dielectric characterization of biological samples, with high-sensitivity and high-spatial resolution.

Projects history

High Power RF-DAC

This project investigates the next generation of high power RF-DACs and digital intensive receivers

Merging electronics and Micro-nano PHotonics in integrated systeMs

Research program for developing an integration platform for high-frequency electronics with micro- and nano-photonics.

  1. A Single-Supply Balun-First Three-Way mm-Wave Doherty PA
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Alexanderson, Mats; de Vreede, Leonardus Cornelis Nicolaas; Alavi, Morteza S.;
    IEEE Transactions on Microwave Theory and Techniques,
    pp. 1-16, 2024. DOI: 10.1109/TMTT.2024.3365697
    Keywords: ... Inductors;Integrated circuit modeling;5G mobile communication;Capacitors;Bandwidth;Impedance;Peak to average power ratio;Compact;Doherty;lumped components;millimeter wave;Norton transformation;power amplifier (PA);three-stage.

  2. 32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
    Pashaeifar, Masoud; Kumaran, Anil K.; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2024 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 532-534, 2024. DOI: 10.1109/ISSCC49657.2024.10454427
    Keywords: ... Time-frequency analysis;5G mobile communication;Transmitters;Linearity;Power amplifiers;Solid state circuits;Reliability.

  3. A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 3, pp. 677-690, 2023. DOI: 10.1109/JSSC.2022.3222028

  4. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
    Shen, Yiyu; Hoogelander, Martijn; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    pp. 1-12, 2023. DOI: 10.1109/JSSC.2023.3279235

  5. An Inverted Doherty Power Amplifier Insensitive to Load Variation With an Embedded Impedance Sensor in Its Output Power-Combining Network
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leonardus Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    pp. 1-15, 2023. DOI: 10.1109/TMTT.2023.3277081

  6. A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    pp. 1-16, 2023. DOI: 10.1109/JSSC.2023.3267723

  7. The Efficiency and Power Utilization of Current-Scaling Digital Transmitters
    Mul, Dieuwert P. N.; Bootsman, Robert J.; Beikmirza, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    pp. 1-17, 2023. DOI: 10.1109/TMTT.2023.3336984
    Keywords: ... Switches;Radio frequency;Clocks;Logic gates;Transmitters;Power generation;Loading;Current mode;current scaling;digital transmitter (DTX);Doherty;efficiency;multiphase;peak-to-average-power ratio (PAPR);polar;power utilization;RF-DAC;signed Cartesian (SC);upconversion.

  8. 19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2023 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 292-294, 2023. DOI: 10.1109/ISSCC42615.2023.10067266

  9. PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 211-214, 2023. DOI: 10.1109/IMS37964.2023.10188045
    Keywords: ... Loading;Power amplifiers;Couplers;Microwave theory and techniques;Microwave amplifiers;Power generation;Power Amplifier;VSWR;Coupler;Gallium Nitrite (GaN);HEMT.

  10. A Low-Complexity Digital Predistortion Technique For Digital I/Q Transmitters
    Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 787-790, 2023. DOI: 10.1109/IMS37964.2023.10187914
    Keywords: ... Microwave measurement;Constellation diagram;Transmitters;Bandwidth;Microwave theory and techniques;Predistortion;Digital pre-distortion;DPD;constellation;mapping;digital transmitter;RF-DAC.

  11. A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Nemati, Hossein Mashad; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 189-192, 2023. DOI: 10.1109/RFIC54547.2023.10186161
    Keywords: ... Power measurement;5G mobile communication;Radio transmitters;Power amplifiers;Radiofrequency integrated circuits;Frequency measurement;Scattering parameters;Doherty;3-stage Power amplifier;Compact;Millimeter wave;Lumped components;Norton transformation.

  12. A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861

  13. A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
    Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
    IEEE Solid-State Circuits Letters,
    Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661

  14. A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685

  15. Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Microwave and Wireless Components Letters,
    Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257

  16. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000

  17. A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
    Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362

  18. A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
    Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 52nd European Microwave Conference (EuMC),
    pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452

  19. A 39 W Fully Digital Wideband Inverted Doherty Transmitter
    Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405

  20. A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506

  21. A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
    Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209

  22. A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
    Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854

  23. A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797

  24. Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters
    Kumaran, Anil Kumar; Nemati, Hossein Mashad; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 438-442, 2022. DOI: 10.1109/ISCAS48785.2022.9937619

  25. A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542

  26. A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126

  27. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776

  28. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  29. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849

  30. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122

  31. On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
    Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788

  32. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
    Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
    pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772

  33. A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
    Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 18th International SoC Design Conference (ISOCC),
    pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887

  34. A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    In 2021 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396

  35. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942

  36. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324

  37. A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2020 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949

  38. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564

  39. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  40. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  41. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  42. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228

  43. High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
    Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876

  44. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  45. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964

  46. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  47. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950

  48. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  49. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
    Hu, Zhebin; Vlachogiannakis, Gerasimos; Pertijs, Michiel A.P.; de Vreede, Leo; Spirito, Marco;
    In 2018 IEEE/MTT-S International Microwave Symposium - IMS,
    pp. 1160-1163, 2018. DOI: 10.1109/MWSYM.2018.8439438

  50. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  51. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380

  52. Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
    Jordi vd Meulen; Leo de Vreede;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    2017.

  53. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901

  54. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926

  55. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067

  56. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  57. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066

  58. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051

  59. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
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    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250

  60. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341

  61. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525

  62. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287

  63. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194

  64. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260

  65. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441

  66. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
    Volume 53, Issue 4, pp. 216-225, 2015. DOI: 10.1109/MCOM.2015.7081097

  67. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
    Hou, Rui; Spirito, Marco; Heeres, Rob; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2015 IEEE MTT-S International Microwave Symposium,
    pp. 1-3, 2015. DOI: 10.1109/MWSYM.2015.7166945

  68. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 62, Issue 4, pp. 732-752, 2014. DOI: 10.1109/TMTT.2014.2307876

  69. A package-integratable six-port reflectometer for power devices
    Venter, Razvan G.; Rui Hou; Buisman, Koen; Spirito, Marco; Werner, Klaus; de Vreede, Leo C.N.;
    In 2014 IEEE MTT-S International Microwave Symposium (IMS2014),
    pp. 1-4, 2014. DOI: 10.1109/MWSYM.2014.6848549

  70. Analysis of pure- and mixed-mode class-B outphasing amplifiers
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    In 2014 IEEE 5th Latin American Symposium on Circuits and Systems,
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  71. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; Acar, Mustafa; de Langen, Michel; Wesson, Robin; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372

  72. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
    Gentile, Gennaro; Jovanović, Vladimir; Pelk, Marco J.; Jiang, Lai; Dekker, Ronald; de Graaf, P.; Rejaei, Behzad; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518

  73. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
    Gentile, G.; Rejaei, B.; Jovanović, V.; Nanver, L.K.; de Vreede, L.C.N.; Spirito, M.;
    In 2013 European Microwave Integrated Circuit Conference,
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  74. A 70W package-integrated class-E Chireix outphasing RF power amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697341

  75. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
    Hou, Rui; Spirito, Marco; Gajadharsing, John; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697599

  76. Evaluation of HBT device linearity using advanced measurement techniques
    Buisman, K.; de Vreede, L. C. N.; Marchetti, M.; van der Heijden, M. P.; Zampardi, P. J.;
    In 2013 European Microwave Conference,
    pp. 259-262, 2013. DOI: 10.23919/EuMC.2013.6686640

  77. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
    Manjanna, A. Kumar; Marchetti, M.; Buisman, K.; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.;
    In 2013 European Microwave Conference,
    pp. 255-258, 2013. DOI: 10.23919/EuMC.2013.6686639

  78. On the bandwidth performance of Doherty amplifiers
    de Vreede, L. C. N.; Gajadharsing, R.; Neo, W. C. E.;
    In 2013 IEEE International Wireless Symposium (IWS),
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  79. Synthesized pulsed bias for device characterization
    Kumar Manjanna, A.; Buisman, K.; Spirito, M.; Marchetti, M.; Pelk, M.; de Vreede, L. C. N.;
    In 81st ARFTG Microwave Measurement Conference,
    pp. 1-4, 2013. DOI: 10.1109/ARFTG.2013.6579031

  80. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
    Alavi, Morteza S.; Voicu, George; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 167-170, 2013. DOI: 10.1109/RFIC.2013.6569551

  81. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139

  82. All-Digital RF $I/Q$ Modulator
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Visweswaran, Akshay; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3513-3526, 2012. DOI: 10.1109/TMTT.2012.2211612

  83. RF Power Insensitive Varactors
    Buisman, Koen; Huang, Cong; Zampardi, Peter J.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 22, Issue 8, pp. 418-420, 2012. DOI: 10.1109/LMWC.2012.2206209

  84. Silicon integrated waveguide technology for mm-wave frequency scanning array
    Gentile, G.; Spirito, M.; de Vreede, L.C.N; Rejaei, B.; Dekker, R.; de Graaf, P.;
    In 2012 7th European Microwave Integrated Circuit Conference,
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  85. Digital predistortion for dual-input Doherty amplifiers
    H. Cao; J. Qureshi; T. Eriksson; C. Fager; L. de Vreede;
    In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications,
    pp. 45-48, Jan 2012.

  86. Contactless measurement of in-circuit reflection coefficients
    Rui Hou; Spirito, Marco; Kooij, Bert-Jan; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6259588

  87. On the design of package-integrated RF high-power amplifiers
    Calvillo-Cortes, David A.; Shi, Kanjun; de Langen, Michel; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
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  88. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Burghartz, Joachim N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 59, Issue 5, pp. 1339-1349, 2011. DOI: 10.1109/TMTT.2011.2116037

  89. A 2-GHz digital I/Q modulator in 65-nm CMOS
    Alavi, Morteza S.; Visweswaran, Akshay; Staszewski, Robert B.; de Vreede, Leo C.N; Long, John R.; Akhnoukh, Atef;
    In IEEE Asian Solid-State Circuits Conference 2011,
    pp. 277-280, 2011. DOI: 10.1109/ASSCC.2011.6123565

  90. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
    Calvillo-Cortes, David A.; de Vreede, Leo C.N.; de Langen, Michel;
    In Asia-Pacific Microwave Conference 2011,
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  91. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
    Alavi, Morteza S.; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2011 IEEE International Symposium on Radio-Frequency Integration Technology,
    pp. 21-24, 2011. DOI: 10.1109/RFIT.2011.6141758

  92. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 6th European Microwave Integrated Circuit Conference,
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  93. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 41st European Microwave Conference,
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  94. A transformer for high-power RF applications using bondwires in parallel
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van der Heijden, Mark P.;
    In 2011 41st European Microwave Conference,
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  95. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
    Zhang, Ronghui; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine M. W.;
    In 2011 IEEE Radio Frequency Integrated Circuits Symposium,
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  96. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
    Calvillo-Cortes, David A.; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine; Sonsky, Jan;
    In 2011 IEEE International Solid-State Circuits Conference,
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  97. Millimeter-wave integrated waveguides on silicon
    Gentile, G.; Dekker, R.; de Graaf, P.; Spirito, M.; de Vreede, L. C. N.; Rejaei, B.;
    In 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
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  98. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
    Alavi, Morteza. S.; van Rijs, Fred; Marchetti, Mauro; Squillante, Michele; Zhang, Tao; Theeuwen, Steven J.C.H.; Volokhine, Yuri; Jos, H.F.F.; Heijden, Mark P. v. d.; Acar, Mustafa; de Vreede, Leo C.N.;
    In 2011 IEEE MTT-S International Microwave Symposium,
    pp. 1-4, 2011. DOI: 10.1109/MWSYM.2011.5972665

  99. Silicon Filled Integrated Waveguides
    Gentile, G.; Dekker, Ronald; de Graaf, Pascal; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.; Rejaei Salmassi, B.;
    IEEE Microwave and Wireless Components Letters,
    Volume 20, Issue 10, pp. 536-538, 2010. DOI: 10.1109/LMWC.2010.2063420

  100. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
    IEEE Electron Device Letters,
    Volume 31, Issue 2, pp. 108-110, 2010. DOI: 10.1109/LED.2009.2037528

  101. The state-of-the-art of RF capacitive tunable components (Invited)
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; de Vreede, Leo C. N.;
    In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology,
    pp. 619-622, 2010. DOI: 10.1109/ICSICT.2010.5667304

  102. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
    Huang, C.; Buisman, K.; Nanver, L. K.; Zampardi, P. J.; Larson, L. E.; de Vreede, L. C. N.;
    In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 204-211, 2010. DOI: 10.1109/BIPOL.2010.5668027

  103. A wide-band 20W LMOS Doherty power amplifier
    Qureshi, J. H.; Li, N.; Neo, W.C. E.; van Rijs, F.; Blednov, I.; de Vreede, L.C.N.;
    In 2010 IEEE MTT-S International Microwave Symposium,
    pp. 1504-1507, 2010. DOI: 10.1109/MWSYM.2010.5517561

  104. A multi-step phase calibration procedure for closely spaced multi-tone signals
    Mirra, M.; Marchetti, M.; Tessitore, F.; Spirito, M.; de Vreede, L.C.N.; Betts, L.;
    In 75th ARFTG Microwave Measurement Conference,
    pp. 1-5, 2010. DOI: 10.1109/ARFTG.2010.5496320

  105. A 120µW fully-integrated BPSK receiver in 90nm CMOS
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Pekarik, John J.; Burghartz, Joachim N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 277-280, 2010. DOI: 10.1109/RFIC.2010.5477277

  106. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
    van Schie, M.C.A.; van der Heijden, M.P.; Acar, M.; de Graauw, A.J.M.; de Vreede, L.C.N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 399-402, 2010. DOI: 10.1109/RFIC.2010.5477315

  107. A mixed-signal load-pull system for base-station applications
    Marchetti, Mauro; Heeres, Rob; Squillante, Michele; Pelk, Marco; Spirito, Marco; de Vreede, Leo C. N.;
    In 2010 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 491-494, 2010. DOI: 10.1109/RFIC.2010.5477381

  108. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
    de Vreede, L.C.N.; Pelk, M.; Neo, E.; Qureshi, J.; Spirito, M.; Squillante, M.; Marchetti, M.;
    In 2010 IEEE 11th Annual Wireless and Microwave Technology Conference (WAMICON),
    pp. 1-5, 2010. DOI: 10.1109/WAMICON.2010.5461858

  109. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
    IEEE Journal of Solid-State Circuits,
    Volume 44, Issue 9, pp. 2322-2338, 2009. DOI: 10.1109/JSSC.2009.2023016

  110. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.; Pelk, Marco J.; Marchetti, Mauro; Neo, W. C. Edmund; Gajadharsing, John R.; van der Heijden, Mark P.; de Vreede, L. C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 8, pp. 1925-1935, 2009. DOI: 10.1109/TMTT.2009.2025430

  111. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    Huang, Cong; Buisman, Koen; Marchetti, Mauro; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 57, Issue 1, pp. 205-215, 2009. DOI: 10.1109/TMTT.2008.2008978

  112. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
    Macias-Montero, J.G.; Yan, H.; Akhnoukh, A.; de Vreede, L.C.N.; Long, J.R.; Lopez-Villegas, J.M.; Pekarik, J.J.;
    In 2009 Proceedings of ESSCIRC,
    pp. 304-307, 2009. DOI: 10.1109/ESSCIRC.2009.5325959

  113. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
    Squillante, Michele; Marchetti, Mauro; Spirito, Marco; de Vreede, Leo C. N.;
    In 2009 73rd ARFTG Microwave Measurement Conference,
    pp. 1-5, 2009. DOI: 10.1109/ARFTG.2009.5278074

  114. Active scan-beam reflectarray antenna loaded with tunable capacitor
    Hajian, M.; Kuijpers, B.; Buisman, K.; Akhnoukh, A.; Plek, M.; de Vreede, L.C.N.; Zijdeveld, J.; Ligthart, L. P.;
    In 2009 3rd European Conference on Antennas and Propagation,
    pp. 1158-1161, 2009.

  115. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
    Marchetti, Mauro; Pelk, Marco J.; Buisman, Koen; Neo, W. C. Edmund; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 12, pp. 2979-2988, 2008. DOI: 10.1109/TMTT.2008.2007330

  116. A 67 dBm $OIP_3$ Multistacked Junction Varactor
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008. DOI: 10.1109/LMWC.2008.2005234

  117. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
    Pelk, Marco J.; Neo, W. C. Edmund; Gajadharsing, John R.; Pengelly, Raymond S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 7, pp. 1582-1591, 2008. DOI: 10.1109/TMTT.2008.924364

  118. Enabling Low-Distortion Varactors for Adaptive Transmitters
    Huang, Cong; de Vreede, Leo C. N.; Sarubbi, Francesco; Popadic, Milos; Buisman, Koen; Qureshi, Jawad; Marchetti, Mauro; Akhnoukh, Atef; Scholtes, Tom L. M.; Larson, Lawrence E.; Nanver, Lis K.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 5, pp. 1149-1163, 2008. DOI: 10.1109/TMTT.2008.921679

  119. Special RF/microwave devices in Silicon-on-Glass Technology
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    In 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 33-40, 2008. DOI: 10.1109/BIPOL.2008.4662707

  120. A highly efficient chireix amplifier using adaptive power combining
    Qureshi, J.; Liu, R.; de Graauw, A.J.M.; van der Heijden, M.P.; Gajadharsing, J.; de Vreede, L.C.N.;
    In 2008 IEEE MTT-S International Microwave Symposium Digest,
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  121. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
    Kim, S.; Qureshi, J.H.; Buisman, K.; Larson, L.E.; de Vreede, L.C.N.;
    In 2008 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 175-178, 2008. DOI: 10.1109/RFIC.2008.4561412

  122. RF/microwave device fabrication in silicon-on-glass technology
    Nanver, L.K.; Schellevis, H.; Scholtes, T.L.M.; La Spina, L.; Lorito, G.; Sarubbi, F.; Gonda, V.; Popadic, M.; Buisman, K.; de Vreede, L.C.N.; Huang, C.; Milosavljevic, S.; Goudena, E.J.G.;
    In 2008 26th International Conference on Microelectronics,
    pp. 273-280, 2008. DOI: 10.1109/ICMEL.2008.4559277

  123. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
    Gentile, G.; Buisman, K.; Akhoukh, A.; de Vreede, L.C.N.; Rejaei, B.; Nanver, L.K.;
    In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
    pp. 199-202, 2008. DOI: 10.1109/SMIC.2008.56

  124. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
    Neo, W. C. Edmund; Qureshi, Jawad; Pelk, Marco J.; Gajadharsing, John R.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 55, Issue 5, pp. 866-879, 2007. DOI: 10.1109/TMTT.2007.895160

  125. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
    Buisman, Koen; de Vreede, Leo C. N.; Larson, Lawrence E.; Spirito, Marco; Akhnoukh, Atef; Lin, Yu; Liu, Xiao-dong; Nanver, Lis K.;
    IEEE Microwave and Wireless Components Letters,
    Volume 17, Issue 1, pp. 58-60, 2007. DOI: 10.1109/LMWC.2006.887262

  126. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
    Marchetti, M.; Buisman, K.; Pelk, M.; Smith, L.; de Vreede, L.C.N.;
    In 2007 70th ARFTG Microwave Measurement Conference (ARFTG),
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  127. A Low-Loss Compact Linear Varactor Based Phase-Shifter
    Qureshi, J.H.; Kim, S.; Buisman, K.; Huang, C.; Pelk, M. J.; Akhnoukh, A.; Larson, L.E.; Nanver, L. K.; de Vreede, L.C.N.;
    In 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium,
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  128. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
    Buisman, K.; Huang, C.; Akhnoukh, A.; Marchetti, M.; de Vreede, L.C.N.; Larson, L.E.; Nanver, L.K.;
    In 2007 IEEE/MTT-S International Microwave Symposium,
    pp. 319-322, 2007. DOI: 10.1109/MWSYM.2007.380416

  129. Varactor element and low distortion varactor circuit arrangement
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  130. Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
    Spirito, Marco; Pelk, Marco J.; van Rijs, Fred; Theeuwen, Steven J. C. H.; Hartskeerl, Dave; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 54, Issue 12, pp. 4225-4236, 2006. DOI: 10.1109/TMTT.2006.885568

  131. A pulsed network analyzer for high dynamic range isothermal measurements
    Marchetti, M.; Pelk, M.; Buisman, K.; Spirito, M.; de Vreede, L. C. N.;
    In 2006 68th ARFTG Conference: Microwave Measurement,
    pp. 1-4, 2006. DOI: 10.1109/ARFTG.2006.8361670

  132. Silicon-on-glass technology for RF and microwave device fabrication
    Nanver, Lis K.; Schellevis, H.; Scholtes, T.L.M.; La Spina, L.; Lorito, G.; Sarubbi, F.; Gonda, V.; Popadic, M.; Buisman, K.; de Vreede, L.C.N.; Huang, C.; Milosavljevic, S.; Goudena, E.J.G.;
    In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings,
    pp. 162-165, 2006. DOI: 10.1109/ICSICT.2006.306127

  133. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
    Zheng, Renliang; Sanduleanu, Mihai; Aditham, R.P.; de Vreede, L.C.N.; Ren, Junyan;
    In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings,
    pp. 1724-1726, 2006. DOI: 10.1109/ICSICT.2006.306406

  134. "Linearization Techniques at the Device and Circuit Level" (Invited)
    de Vreede, L.C.N.; van der Heijden, M.P.;
    In 2006 Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 1-8, 2006. DOI: 10.1109/BIPOL.2006.311128

  135. Surface-passivated high-resistivity silicon as a true microwave substrate
    Spirito, M.; De Paola, F.M.; Nanver, L.K.; Valletta, E.; Bifeng Rong; Rejaei, B.; de Vreede, L.C.N.; Burghartz, J.N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 53, Issue 7, pp. 2340-2347, 2005. DOI: 10.1109/TMTT.2005.850435

  136. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
    Buisman, K.; de Vreede, L. C. N.; Larson, L.E.; Spirito, M.; Akhnoukh, A.; Scholtes, T.L.M.; Nanver, L. K.;
    In IEEE MTT-S International Microwave Symposium Digest, 2005.,
    pp. 157-160, 2005. DOI: 10.1109/MWSYM.2005.1516547

  137. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
    Neo, W.C.E.; Liu, X.; Lin, Y.; de Vreede, L.C.N.; Larson, L.E.; Spirito, S.; Akhnoukh, A.; de Graauw, A.; Nanver, L.K.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.,
    pp. 108-111, 2005. DOI: 10.1109/BIPOL.2005.1555211

  138. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
    Spirito, M.; van der Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.; Zampardi, P.J.; Larson, L.E.; Burghartz, J.N.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.,
    pp. 112-115, 2005. DOI: 10.1109/BIPOL.2005.1555212

  139. High-performance varactor diodes integrated in a silicon-on-glass technology
    Buisman, K.; Nanver, L.K.; Scholtes, T.L.M.; Schellevis, H.; de Vreede, L.C.N.;
    In Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.,
    pp. 117-120, 2005. DOI: 10.1109/ESSDER.2005.1546599

  140. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
    Buisman, K.; de Vreede, L.C.N.; Larson, L.E.; Spirito, M.; Akhnoukh, A.; Lin, Y.; Liu, X.; Nanver, L.K.;
    In 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers,
    pp. 389-392, 2005. DOI: 10.1109/RFIC.2005.1489820

  141. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
    van der Heijden, M.P.; de Vreede, L.C.N.; Burghartz, J.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 39, Issue 10, pp. 1727-1736, 2004. DOI: 10.1109/JSSC.2004.833759

  142. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
    Cuoco, V.; Yanson, O.; Hammes, P.; Spirito, M.; de Vreede, L.C.N.; Steenwijk, A.v.; Versleijen, M.; Neo, W.C.E.; Jos, H.F.F.; Burghartz, J.N.;
    In 34th European Microwave Conference, 2004.,
    pp. 217-220, 2004.

  143. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
    W.C.E. Neo; van der Heijden, M.P.; de Vreede, L.C.N.; Spirito, M.; Cuoco, V.; van Rijs, F.;
    In 34th European Microwave Conference, 2004.,
    pp. 1173-1175, 2004.

  144. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
    De Paola, F.M.; de Vreede, L.C.N.; Nanver, L.K.; Rinaldi, N.; Burghartz, J.N.;
    In Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004.,
    pp. 69-72, 2004. DOI: 10.1109/SMIC.2004.1398169

  145. Base-band impedance control and calibration for on-wafer linearity measurements
    Pelk, M.J.; de Vreede, L.C.N.; Spirito, M.; Jos, J.H.;
    In ARFTG 63rd Conference, Spring 2004,
    pp. 35-40, 2004. DOI: 10.1109/ARFTG.2004.1387852

  146. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
    Cuoco, V.; Neo, W.C.E.; de Vreede, L.C.N.; de Graaff, H.C.; Nanver, L.K.; Buisman, K.; Wu, H.C.; Jos, H.F.F.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
    pp. 148-151, 2004. DOI: 10.1109/BIPOL.2004.1365766

  147. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
    van der Heijden, M.P.; Spirito, M.; Pelk, M.; de Vreede, L.C.N.; Burghartz, J.N.;
    In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
    pp. 44-47, 2004. DOI: 10.1109/BIPOL.2004.1365741

  148. The electro-thermal Smoothie database model for LDMOS devices
    Cuoco, V.; Neo, W.C.E.; Spirito, M.; Yanson, O.; Nenadovic, N.; de Vreede, L.C.N.; Jos, H.F.F.; Burghartz, J.N.;
    In Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850),
    pp. 457-460, 2004. DOI: 10.1109/ESSDER.2004.1356590

  149. A novel active harmonic load-pull setup for on-wafer device linearity characterization
    Spirito, M.; de Vreede, L.C.N.; de Kok, M.; Pelk, M.; Hartskeerl, D.; Jos, H.F.F.; Mueller, J.E.; Burghartz, J.;
    In 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535),
    pp. 1217-1220 Vol.2, 2004. DOI: 10.1109/MWSYM.2004.1339207

  150. Power amplifier PAE and ruggedness optimization by second-harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 38, Issue 9, pp. 1575-1583, 2003. DOI: 10.1109/JSSC.2003.815918

  151. A calibration procedure for on-wafer differential load-pull measurements
    Spirito, M.; van der Heijden, M.P.; de Kok, M.; de Vreede, L.C.N.;
    In 61st ARFTG Conference Digest, Spring 2003.,
    pp. 1-4, 2003. DOI: 10.1109/ARFTGS.2003.1216860

  152. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
    van der Heijden, M.P.; Spirito, M.; de Vreede, L.C.N.; van Straten, F.; Burghartz, J.N.;
    In IEEE MTT-S International Microwave Symposium Digest, 2003,
    pp. 235-238 vol.1, 2003. DOI: 10.1109/MWSYM.2003.1210923

  153. Design and characterization of integrated passive elements on high ohmic silicon
    Valletta, E.; Van Beek, J.; Den Dekker, A.; Pulsford, N.; Jos, H.F.F.; de Vreede, L.C.N.; Nanver, L.K.; Burghartz, J.N.;
    In IEEE MTT-S International Microwave Symposium Digest, 2003,
    pp. 1235-1238 vol.2, 2003. DOI: 10.1109/MWSYM.2003.1212592

  154. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Mueller, J.E.; Burghartz, J.N.;
    In 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers.,
    pp. 49-52, 2003. DOI: 10.1109/SMIC.2003.1196666

  155. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 37, Issue 9, pp. 1176-1183, 2002. DOI: 10.1109/JSSC.2002.801198

  156. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 50, Issue 9, pp. 2176-2184, 2002. DOI: 10.1109/TMTT.2002.802332

  157. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
    Cuoco, V.; van de Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.;
    In 32nd European Solid-State Device Research Conference,
    pp. 635-638, 2002. DOI: 10.1109/ESSDERC.2002.195011

  158. Power amplifier PAE and ruggedness optimization by second harmonic control
    Spirito, M.; de Vreede, L.C.N.; Nanver, L.K.; Weber, S.; Burghartz, J.N.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 173-176, 2002. DOI: 10.1109/BIPOL.2002.1042911

  159. The effect of non-saturated electron drift velocity on bipolar device linearity
    de Vreede, L.C.N.; de Graaff, H.C.; Rejeai, B.;
    In Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 88-91, 2002. DOI: 10.1109/BIPOL.2002.1042893

  160. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
    Cuoco, V.; van den Heijden, M.P.; de Vreede, L.C.N.;
    In 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278),
    pp. 2149-2152 vol.3, 2002. DOI: 10.1109/MWSYM.2002.1012296

  161. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
    van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1399-1406, 2001. DOI: 10.1109/4.944669

  162. Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
    de Vreede, L.C.N.;
    IEEE Journal of Solid-State Circuits,
    Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665

  163. Isothermal Non-Linear Device Characterization
    Cuoco, V.; de Kok, M.; Heijden, M.P.v.d.; de Vreede, L.C.N.;
    In 58th ARFTG Conference Digest,
    pp. 1-4, 2001. DOI: 10.1109/ARFTG.2001.327493

  164. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
    In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212),
    pp. 163-166, 2001. DOI: 10.1109/BIPOL.2001.957882

  165. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
    van der Heijden, M.P.; Gajadharsing, J.R.; Rejaei, B.; de Vreede, L.C.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1679-1682 vol.3, 2001. DOI: 10.1109/MWSYM.2001.967228

  166. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
    van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
    In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
    pp. 1363-1366 vol.2, 2001. DOI: 10.1109/MWSYM.2001.967149

  167. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
    de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
    IEEE Journal of Solid-State Circuits,
    Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094

  168. The Impact of Silicon Technology on Future Microwave Systems
    Larson, Lawrence E.; de Vreede, Leo C.N.;
    In 1999 29th European Microwave Conference,
    pp. 166-169, 1999. DOI: 10.1109/EUMA.1999.338299

  169. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Electron Devices,
    Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842

  170. Optimisation of the base-collector doping profile for high-frequency distortion
    van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
    In 28th European Solid-State Device Research Conference,
    pp. 496-499, 1998.

  171. Optimum dimensions of the epilayer for third-order intermodulation distortion
    de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
    In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
    pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916

  172. MAIDS: A Microwave Active Integral Device Simulator
    de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
    In 27th European Solid-State Device Research Conference,
    pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395

  173. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
    In Optical Fiber Communications, OFC.,
    pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319

  174. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
    pp. 63-66, 1995.

  175. A figure of merit for the high-frequency noise behavior of bipolar transistors
    de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Journal of Solid-State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206

  176. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058

  177. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
    In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854

  178. A high frequency model based on the physical structure of the ceramic multilayer capacitor
    de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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Last updated: 31 Jan 2024

Leo de Vreede

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