Electronics Research Laboratory
Dept. of Microelectronics

MSc M. Hashemi

PhD student
Electronic Circuits and Architectures (ELCA), Department of Microelectronics


Promotor: Leo de Vreede

Expertise: RF electronics

Themes: RF electronics

Biography

Mohsen Hashemi is a Ph.D. candidate researcher at TU Delft since November 2013. He received his M.Sc. degree from Sharif University of Technology, Tehran, Iran, and B.Sc. degree from Shahid Beheshti University, Tehran, Iran, both in electronics engineering.

Before joining the ELCA group, he was a Ph.D. student of electronics engineering at the University of Tehran, Iran, and also he was the head of the RF Research group at Baregheh Communication Company, Tehran, where he was involved in designing wideband receivers and frequency synthesizers.

He is a leading author of an ISSCC paper and he serves as a Reviewer of the IEEE Transactions on VLSI Systems as well as the IEEE Transactions on Circuits and Systems II. His research interests are:

His research interests are:

  1. Digital-Intensive RF IC design
  2. Analog/Digital signal conditioning for high accuracy in the TX/RX
  3. High-speed data converters

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

  1. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000

  2. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  3. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  4. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  5. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964

  6. A Wideband I/Q RFDAC-Based Phase Modulator
    Yiyu Shen; Michael Polushkin; Mohammad Reza Mehrpoo; Mohsen Hashemi; Earl McCune; Morteza S. Alavi; Leo C. N. de Vreede,;
    In (accepted RWS 2018).,
    2018.

  7. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  8. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  9. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380

  10. Highly Efficient and Linear Class-E CMOS Digital Power Amplifier Using a Compensated Marchand Balun and Circuit-Level Linearization Achieving 67% Peak DE and -40dBc ACLR without DPD
    Mohsen Hashemi;
    In IEEE MTT-S International Microwave Symposium (IMS),,
    IEEE, pp. 2025 – 2028, 2017.

  11. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  12. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066

  13. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051

BibTeX support

Last updated: 21 Jun 2023

Mohsen Hashemi

Alumnus