Leo de Vreede

Publications

  1. A Single-Supply Balun-First Three-Way mm-Wave Doherty PA
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Alexanderson, Mats; de Vreede, Leonardus Cornelis Nicolaas; Alavi, Morteza S.;
    IEEE Transactions on Microwave Theory and Techniques,
    pp. 1-16, 2024. DOI: 10.1109/TMTT.2024.3365697
    Keywords: ... Inductors;Integrated circuit modeling;5G mobile communication;Capacitors;Bandwidth;Impedance;Peak to average power ratio;Compact;Doherty;lumped components;millimeter wave;Norton transformation;power amplifier (PA);three-stage.

  2. 32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
    Pashaeifar, Masoud; Kumaran, Anil K.; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2024 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 532-534, 2024. DOI: 10.1109/ISSCC49657.2024.10454427
    Keywords: ... Time-frequency analysis;5G mobile communication;Transmitters;Linearity;Power amplifiers;Solid state circuits;Reliability.

  3. A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 58, Issue 3, pp. 677-690, 2023. DOI: 10.1109/JSSC.2022.3222028

  4. A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
    Shen, Yiyu; Hoogelander, Martijn; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    pp. 1-12, 2023. DOI: 10.1109/JSSC.2023.3279235

  5. An Inverted Doherty Power Amplifier Insensitive to Load Variation With an Embedded Impedance Sensor in Its Output Power-Combining Network
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leonardus Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    pp. 1-15, 2023. DOI: 10.1109/TMTT.2023.3277081

  6. A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    pp. 1-16, 2023. DOI: 10.1109/JSSC.2023.3267723

  7. The Efficiency and Power Utilization of Current-Scaling Digital Transmitters
    Mul, Dieuwert P. N.; Bootsman, Robert J.; Beikmirza, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    pp. 1-17, 2023. DOI: 10.1109/TMTT.2023.3336984
    Keywords: ... Switches;Radio frequency;Clocks;Logic gates;Transmitters;Power generation;Loading;Current mode;current scaling;digital transmitter (DTX);Doherty;efficiency;multiphase;peak-to-average-power ratio (PAPR);polar;power utilization;RF-DAC;signed Cartesian (SC);upconversion.

  8. 19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications
    Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2023 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 292-294, 2023. DOI: 10.1109/ISSCC42615.2023.10067266

  9. PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment
    Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 211-214, 2023. DOI: 10.1109/IMS37964.2023.10188045
    Keywords: ... Loading;Power amplifiers;Couplers;Microwave theory and techniques;Microwave amplifiers;Power generation;Power Amplifier;VSWR;Coupler;Gallium Nitrite (GaN);HEMT.

  10. A Low-Complexity Digital Predistortion Technique For Digital I/Q Transmitters
    Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
    pp. 787-790, 2023. DOI: 10.1109/IMS37964.2023.10187914
    Keywords: ... Microwave measurement;Constellation diagram;Transmitters;Bandwidth;Microwave theory and techniques;Predistortion;Digital pre-distortion;DPD;constellation;mapping;digital transmitter;RF-DAC.

  11. A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain
    Kumaran, Anil Kumar; Pashaeifar, Masoud; Nemati, Hossein Mashad; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 189-192, 2023. DOI: 10.1109/RFIC54547.2023.10186161
    Keywords: ... Power measurement;5G mobile communication;Radio transmitters;Power amplifiers;Radiofrequency integrated circuits;Frequency measurement;Scattering parameters;Doherty;3-stage Power amplifier;Compact;Millimeter wave;Lumped components;Norton transformation.

  12. A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861

  13. A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
    Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
    IEEE Solid-State Circuits Letters,
    Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661

  14. A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685

  15. Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Microwave and Wireless Components Letters,
    Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257

  16. High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
    Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000

  17. A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
    Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362

  18. A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
    Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 52nd European Microwave Conference (EuMC),
    pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452

  19. A 39 W Fully Digital Wideband Inverted Doherty Transmitter
    Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405

  20. A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
    pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506

  21. A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
    Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209

  22. A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
    Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854

  23. A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797

  24. Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters
    Kumaran, Anil Kumar; Nemati, Hossein Mashad; De Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 438-442, 2022. DOI: 10.1109/ISCAS48785.2022.9937619

  25. A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
    Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542

  26. A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126

  27. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776

  28. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  29. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849

  30. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122

  31. On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
    Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
    pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788

  32. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
    Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
    pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772

  33. A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
    Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 18th International SoC Design Conference (ISOCC),
    pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887

  34. A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
    Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
    In 2021 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396

  35. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942

  36. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324

  37. A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2020 IEEE Custom Integrated Circuits Conference (CICC),
    pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949

  38. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564

  39. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  40. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  41. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  42. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228

  43. High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
    Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876

  44. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  45. Pushing the Linearity Limits of a Digital Polar Transmitter
    Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
    In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
    pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964

  46. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  47. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950

  48. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  49. A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
    Hu, Zhebin; Vlachogiannakis, Gerasimos; Pertijs, Michiel A.P.; de Vreede, Leo; Spirito, Marco;
    In 2018 IEEE/MTT-S International Microwave Symposium - IMS,
    pp. 1160-1163, 2018. DOI: 10.1109/MWSYM.2018.8439438

  50. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  51. 17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
    In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
    pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380

  52. Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
    Jordi vd Meulen; Leo de Vreede;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    2017.

  53. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901

  54. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926

  55. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067

  56. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  57. Highly efficient and linear class-E CMOS digital power amplifier using a compensated Marchand balun and circuit-level linearization achieving 67% peak DE and −40dBc ACLR without DPD
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; Mehrpoo, Mohammadreza; de Vreede, Leo;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2025-2028, 2017. DOI: 10.1109/MWSYM.2017.8059066

  58. A fully-integrated digital-intensive polar Doherty transmitter
    Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Polushkin, Michael; Zhou, Lei; Acar, Mustafa; van Leuken, Rene; Alavi, Morteza S.; de Vreede, Leo;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 196-199, 2017. DOI: 10.1109/RFIC.2017.7969051

  59. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
    Hou, Rui; Spirito, Marco; Van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250

  60. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341

  61. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525

  62. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287

  63. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194

  64. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260

  65. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441

  66. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
    Volume 53, Issue 4, pp. 216-225, 2015. DOI: 10.1109/MCOM.2015.7081097

  67. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
    Hou, Rui; Spirito, Marco; Heeres, Rob; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2015 IEEE MTT-S International Microwave Symposium,
    pp. 1-3, 2015. DOI: 10.1109/MWSYM.2015.7166945

  68. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
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    IEEE Transactions on Microwave Theory and Techniques,
    Volume 62, Issue 4, pp. 732-752, 2014. DOI: 10.1109/TMTT.2014.2307876

  69. A package-integratable six-port reflectometer for power devices
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    In 2014 IEEE MTT-S International Microwave Symposium (IMS2014),
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  70. Analysis of pure- and mixed-mode class-B outphasing amplifiers
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    In 2014 IEEE 5th Latin American Symposium on Circuits and Systems,
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  71. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
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    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372

  72. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
    Gentile, Gennaro; Jovanović, Vladimir; Pelk, Marco J.; Jiang, Lai; Dekker, Ronald; de Graaf, P.; Rejaei, Behzad; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518

  73. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
    Gentile, G.; Rejaei, B.; Jovanović, V.; Nanver, L.K.; de Vreede, L.C.N.; Spirito, M.;
    In 2013 European Microwave Integrated Circuit Conference,
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  74. A 70W package-integrated class-E Chireix outphasing RF power amplifier
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    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697341

  75. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
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    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
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  76. Evaluation of HBT device linearity using advanced measurement techniques
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    In 2013 European Microwave Conference,
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  77. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
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    In 2013 European Microwave Conference,
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  78. On the bandwidth performance of Doherty amplifiers
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    In 2013 IEEE International Wireless Symposium (IWS),
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  79. Synthesized pulsed bias for device characterization
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    In 81st ARFTG Microwave Measurement Conference,
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  80. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
    Alavi, Morteza S.; Voicu, George; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 167-170, 2013. DOI: 10.1109/RFIC.2013.6569551

  81. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139

  82. All-Digital RF $I/Q$ Modulator
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    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3513-3526, 2012. DOI: 10.1109/TMTT.2012.2211612

  83. RF Power Insensitive Varactors
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    IEEE Microwave and Wireless Components Letters,
    Volume 22, Issue 8, pp. 418-420, 2012. DOI: 10.1109/LMWC.2012.2206209

  84. Silicon integrated waveguide technology for mm-wave frequency scanning array
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    In 2012 7th European Microwave Integrated Circuit Conference,
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  85. Digital predistortion for dual-input Doherty amplifiers
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    In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications,
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  86. Contactless measurement of in-circuit reflection coefficients
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    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6259588

  87. On the design of package-integrated RF high-power amplifiers
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    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
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  88. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Burghartz, Joachim N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 59, Issue 5, pp. 1339-1349, 2011. DOI: 10.1109/TMTT.2011.2116037

  89. A 2-GHz digital I/Q modulator in 65-nm CMOS
    Alavi, Morteza S.; Visweswaran, Akshay; Staszewski, Robert B.; de Vreede, Leo C.N; Long, John R.; Akhnoukh, Atef;
    In IEEE Asian Solid-State Circuits Conference 2011,
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  90. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
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    In Asia-Pacific Microwave Conference 2011,
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  91. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
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    In 2011 IEEE International Symposium on Radio-Frequency Integration Technology,
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  92. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 6th European Microwave Integrated Circuit Conference,
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  93. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
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  94. A transformer for high-power RF applications using bondwires in parallel
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    In 2011 41st European Microwave Conference,
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  95. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
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    In 2011 IEEE Radio Frequency Integrated Circuits Symposium,
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  96. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
    Calvillo-Cortes, David A.; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine; Sonsky, Jan;
    In 2011 IEEE International Solid-State Circuits Conference,
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  97. Millimeter-wave integrated waveguides on silicon
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    In 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
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  98. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
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  99. Silicon Filled Integrated Waveguides
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    IEEE Microwave and Wireless Components Letters,
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  100. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
    IEEE Electron Device Letters,
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  101. The state-of-the-art of RF capacitive tunable components (Invited)
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    In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology,
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  102. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
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    In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
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  103. A wide-band 20W LMOS Doherty power amplifier
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  104. A multi-step phase calibration procedure for closely spaced multi-tone signals
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  105. A 120µW fully-integrated BPSK receiver in 90nm CMOS
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  106. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
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  107. A mixed-signal load-pull system for base-station applications
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  108. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
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  109. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
    Nanver, Lis K.; Schellevis, Hugo; Scholtes, Tom L. M.; La Spina, Luigi; Lorito, Gianpaolo; Sarubbi, Francesco; Gonda, Viktor; Popadic, Milos; Buisman, Koen; de Vreede, Leo C. N.; Huang, Cong; Milosavljevic, Silvana; Goudena, Egbert J. G.;
    IEEE Journal of Solid-State Circuits,
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  110. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
    Qureshi, Jawad H.; Pelk, Marco J.; Marchetti, Mauro; Neo, W. C. Edmund; Gajadharsing, John R.; van der Heijden, Mark P.; de Vreede, L. C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
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  111. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
    Huang, Cong; Buisman, Koen; Marchetti, Mauro; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
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  112. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
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    In 2009 Proceedings of ESSCIRC,
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  113. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
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    In 2009 73rd ARFTG Microwave Measurement Conference,
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  114. Active scan-beam reflectarray antenna loaded with tunable capacitor
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    In 2009 3rd European Conference on Antennas and Propagation,
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  115. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
    Marchetti, Mauro; Pelk, Marco J.; Buisman, Koen; Neo, W. C. Edmund; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 12, pp. 2979-2988, 2008. DOI: 10.1109/TMTT.2008.2007330

  116. A 67 dBm $OIP_3$ Multistacked Junction Varactor
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; Sarubbi, Francesco; Popadic, Milos; Scholtes, Tom L. M.; Schellevis, Hugo; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 18, Issue 11, pp. 749-751, 2008. DOI: 10.1109/LMWC.2008.2005234

  117. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
    Pelk, Marco J.; Neo, W. C. Edmund; Gajadharsing, John R.; Pengelly, Raymond S.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 56, Issue 7, pp. 1582-1591, 2008. DOI: 10.1109/TMTT.2008.924364

  118. Enabling Low-Distortion Varactors for Adaptive Transmitters
    Huang, Cong; de Vreede, Leo C. N.; Sarubbi, Francesco; Popadic, Milos; Buisman, Koen; Qureshi, Jawad; Marchetti, Mauro; Akhnoukh, Atef; Scholtes, Tom L. M.; Larson, Lawrence E.; Nanver, Lis K.;
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  119. Special RF/microwave devices in Silicon-on-Glass Technology
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  120. A highly efficient chireix amplifier using adaptive power combining
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  121. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
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  122. RF/microwave device fabrication in silicon-on-glass technology
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  123. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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    In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
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  124. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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    IEEE Transactions on Microwave Theory and Techniques,
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  125. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
    Buisman, Koen; de Vreede, Leo C. N.; Larson, Lawrence E.; Spirito, Marco; Akhnoukh, Atef; Lin, Yu; Liu, Xiao-dong; Nanver, Lis K.;
    IEEE Microwave and Wireless Components Letters,
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  126. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
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    In 2007 70th ARFTG Microwave Measurement Conference (ARFTG),
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  127. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  128. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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    In 2007 IEEE/MTT-S International Microwave Symposium,
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  129. Varactor element and low distortion varactor circuit arrangement
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  130. Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
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  131. A pulsed network analyzer for high dynamic range isothermal measurements
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  132. Silicon-on-glass technology for RF and microwave device fabrication
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  133. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
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  134. "Linearization Techniques at the Device and Circuit Level" (Invited)
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  135. Surface-passivated high-resistivity silicon as a true microwave substrate
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  136. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
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  137. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
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  138. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
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  139. High-performance varactor diodes integrated in a silicon-on-glass technology
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  140. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  141. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
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  142. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
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  143. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
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  144. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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  145. Base-band impedance control and calibration for on-wafer linearity measurements
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  146. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
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  147. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
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  148. The electro-thermal Smoothie database model for LDMOS devices
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  149. A novel active harmonic load-pull setup for on-wafer device linearity characterization
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  150. Power amplifier PAE and ruggedness optimization by second-harmonic control
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  151. A calibration procedure for on-wafer differential load-pull measurements
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  152. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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  153. Design and characterization of integrated passive elements on high ohmic silicon
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  154. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
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  155. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  156. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
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  157. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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  158. Power amplifier PAE and ruggedness optimization by second harmonic control
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  159. The effect of non-saturated electron drift velocity on bipolar device linearity
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  160. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
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  161. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
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  162. Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
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  163. Isothermal Non-Linear Device Characterization
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  164. A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  165. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
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  166. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
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  167. Bipolar transistor epilayer design using the MAIDS mixed-level simulator
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  168. The Impact of Silicon Technology on Future Microwave Systems
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  169. Extension of the collector charge description for compact bipolar epilayer models
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  170. Optimisation of the base-collector doping profile for high-frequency distortion
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  171. Optimum dimensions of the epilayer for third-order intermodulation distortion
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  172. MAIDS: A Microwave Active Integral Device Simulator
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  173. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
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  174. Extension of the collector charge description for compact bipolar epilayer models
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  175. A figure of merit for the high-frequency noise behavior of bipolar transistors
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  176. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
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  177. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
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  178. A high frequency model based on the physical structure of the ceramic multilayer capacitor
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