prof.dr. L.C.N. de Vreede

Professor, Chairman
Electronic Circuits and Architectures (ELCA), Department of Microelectronics

Expertise: RF, Microwave, Power Amplifiers, Device Characterization & modeling

Themes: Big-data on-chip transmission, Microwave circuits, RF electronics, Space electronics systems

Biography

Leo C. N. de Vreede was born in Delft, the Netherlands in 1965. He received the Ph.D. degree (cum laude) from Delft University of Technology in 1996. In 1988 he joined the Laboratory of Telecommunication and Remote Sensing Technology of the Department of Electrical Engineering, Delft University of Technology. In 1996, he was appointed as assistant professor at the Delft University of Technology working on the nonlinear distortion behavior of bipolar transistors at Delft Institute of Microelectronics and Submicron Technology (DIMES). In the winter season of 98-99 he was a guest of the high speed device group at the University of San Diego, California.

In 1999 and 2015 he was appointed as an associate professor respectively full professor at the Delft University of Technology and became responsible for the Microwave Components Group and the Electronics Research Laboratory. Since that time he worked on RF solutions for improved linearity and RF performance at the device, circuit and system level. He is co-founder/advisor of Anteverta-mw a company specialized in RF device characterization, co-founder of DiTIQ, a company focusing on fully digital energy-efficient wideband transmitters. He is (co)recipient of the IEEE Microwave prize in 2008, mentor of the Else Kooi prize awarded PhD work in 2010 and mentor of the Dow Energy dissertation prize awarded PhD work in 2011. Recipient of the TUD entrepreneurial scientist award 2015. He (co)guided several students that won (best) paper awards at the: BCTM, PRORISC, GAAS, ESSDERC, IMS, RFIT and RFIC. He (co)authored more than 110 IEEE refereed conference and journal papers and holds several patents. His current interest includes RF measurement systems, technology optimization and circuit/system concepts for wireless systems.

EE4605 Integrated Circuits and Systems for Wireless Applications

Design and analysis of typical RF IC building blocks in a wireless transceiver

ET4600 Wireless Concepts and Systems

Basic concepts of RF design, such as noise, nonlinearity, Impedance Matching, Analog/Digital Modulation, Pulse-shaping, Mixer, Oscillator, Link-budget, Transmitter/Receiver Architectures

Digital tRAnSmitTer ICs

This project aims to develop DTX ICs for highly-integrated and energy-efficient mMIMO base stations. (OPEN POSITIONS)

High Power RF-DAC

This project investigates the next generation of high power RF-DACs and digital intensive receivers

Energy Efficient Wideband Transmitter, NXP Partnership ‘Advanced 5G Solutions’

This project providing enhanced average efficiency in wideband wireless transmitters while withstanding the changing load conditions that can occur in handheld devices and MIMO/smart-antenna communication systems.

Smart Energy Efficient Digital Communication

SEEDCOM aims for fully integrated energy efficient wideband transmitters

smart Everything everywhere Access to content through Small cells Technologies

EAST is focused on the development of Small cell technologies for 5G applications up to 6 GHz

Integrated Near Field sensOrs for high Resolution MicrowavE spectRoscopy

The goal of this project is the creation of a new class of sensors, enabling fast and accurate dielectric characterization of biological samples, with high-sensitivity and high-spatial resolution.

Projects history

Merging electronics and Micro-nano PHotonics in integrated systeMs

Research program for developing an integration platform for high-frequency electronics with micro- and nano-photonics.

  1. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
    Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776

  2. 6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
    Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831

  3. 6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
    Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
    In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
    pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849

  4. Efficiency and Linearity of Digital "Class-C Like" Transmitters
    Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
    In 2020 50th European Microwave Conference (EuMC),
    pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122

  5. An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
    Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
    In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
    pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942

  6. A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
    Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
    In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324

  7. Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
    Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
    IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
    Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564

  8. A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
    Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204

  9. Digital Transmitters for Sub-6GHz Wireless Applications
    Leo de Vreede;
    In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
    2019.

  10. A Wideband Linear $I/Q$ -Interleaving DDRM
    Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
    IEEE Journal of Solid-State Circuits,
    Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685

  11. A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
    Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228

  12. Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
    Leo de Vreede; Morteza S. Alavi;
    In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
    2018.

  13. Bits-In / RF-Out Transmitters for 5G mMIMO
    Leo de Vreede; Morteza S. Alavi;
    In IEEE European Microwave Week (EuMIC) Workshop,
    2018.

  14. A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
    Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
    In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
    pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950

  15. A wideband I/Q RFD AC-based phase modulator
    Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
    In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
    pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215

  16. An Intrinsically Linear Wideband Polar Digital Power Amplifier
    Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647

  17. An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
    M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M.S. Alavi; L.C.N de Vreede;
    In ISSCC,
    pp. 300-301, Feb 2017.

  18. Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
    Jordi vd Meulen; Leo de Vreede;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    2017.

  19. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901

  20. Enhanced bipolar transistor design for the linearization of the base-collector capacitance
    van der Meulen, J.M.M.; de Vreede, L.C.N.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926

  21. High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
    Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
    In 2017 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067

  22. A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
    Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
    In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 188-191, 2017. DOI: 10.1109/RFIC.2017.7969049

  23. Contactless Measurement of Absolute Voltage Waveforms by a Passive Electric-Field Probe
    Hou, Rui; Spirito, Marco; Van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 26, Issue 12, pp. 1008-1010, 2016. DOI: 10.1109/LMWC.2016.2623250

  24. Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through $IM_2$ Cancellation
    Totev, Emil; Huang, Cong; de Vreede, Leo C. N.; Long, John R.; Serdijn, Wouter A.; Verhoeven, Chris;
    IEEE Transactions on Circuits and Systems I: Regular Papers,
    Volume 63, Issue 11, pp. 1785-1793, 2016. DOI: 10.1109/TCSI.2016.2593341

  25. Nonintrusive Near-Field Characterization of Spatially Distributed Effects in Large-Periphery High-Power GaN HEMTs
    Hou, Rui; Lorenzini, Martino; Spirito, Marco; Roedle, Thomas; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 64, Issue 11, pp. 4048-4062, 2016. DOI: 10.1109/TMTT.2016.2613525

  26. A 5.9 GHz RFDAC-based outphasing power amplifier in 40-nm CMOS with 49.2% efficiency and 22.2 dBm power
    Hu, Zhebin; de Vreede, Leo C.N.; Alavi, Morteza S.; Calvillo-Cortes, David A.; Staszewski, Robert Bogdan; He, Songbai;
    In 2016 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 206-209, 2016. DOI: 10.1109/RFIC.2016.7508287

  27. A 112W GaN dual input Doherty-Outphasing Power Amplifier
    Qureshi, Abdul R.; Acar, Mustafa; Qureshi, Jawad; Wesson, Robin; de Vreede, Leo C. N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540194

  28. A 40-nm CMOS permittivity sensor for chemical/biological material characterization at RF/microwave frequencies
    Vlachogiannakis, Gerasimos; Spirito, Marco; Pertijs, Michiel A. P.; de Vreede, Leo C.N.;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, 2016. DOI: 10.1109/MWSYM.2016.7540260

  29. Silicon-Based Technology for Integrated Waveguides and mm-Wave Systems
    Jovanović, Vladimir; Gentile, Gennaro; Dekker, Ronald; de Graaf, Pascal; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Electron Devices,
    Volume 62, Issue 10, pp. 3153-3159, 2015. DOI: 10.1109/TED.2015.2466441

  30. Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity
    de Vreede, Leo C. N.; Acar, Mustafa; Calvillo-Cortes, David A.; van der Heijden, Mark P.; Wesson, Rosbin; de Langen, Michel; Qureshi, Jawad;
    IEEE Communications Magazine,
    Volume 53, Issue 4, pp. 216-225, 2015. DOI: 10.1109/MCOM.2015.7081097

  31. Non-intrusive near-field characterization of distributed effects in large-periphery LDMOS RF power transistors
    Hou, Rui; Spirito, Marco; Heeres, Rob; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2015 IEEE MTT-S International Microwave Symposium,
    pp. 1-3, 2015. DOI: 10.1109/MWSYM.2015.7166945

  32. A Wideband 2$\times$ 13-bit All-Digital I/Q RF-DAC
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 62, Issue 4, pp. 732-752, 2014. DOI: 10.1109/TMTT.2014.2307876

  33. A package-integratable six-port reflectometer for power devices
    Venter, Razvan G.; Rui Hou; Buisman, Koen; Spirito, Marco; Werner, Klaus; de Vreede, Leo C.N.;
    In 2014 IEEE MTT-S International Microwave Symposium (IMS2014),
    pp. 1-4, 2014. DOI: 10.1109/MWSYM.2014.6848549

  34. Analysis of pure- and mixed-mode class-B outphasing amplifiers
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.;
    In 2014 IEEE 5th Latin American Symposium on Circuits and Systems,
    pp. 1-4, 2014. DOI: 10.1109/LASCAS.2014.6820271

  35. A Package-Integrated Chireix Outphasing RF Switch-Mode High-Power Amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; Acar, Mustafa; de Langen, Michel; Wesson, Robin; van Rijs, Fred; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 61, Issue 10, pp. 3721-3732, 2013. DOI: 10.1109/TMTT.2013.2279372

  36. Silicon-Filled Rectangular Waveguides and Frequency Scanning Antennas for mm-Wave Integrated Systems
    Gentile, Gennaro; Jovanović, Vladimir; Pelk, Marco J.; Jiang, Lai; Dekker, Ronald; de Graaf, P.; Rejaei, Behzad; de Vreede, Leo C. N.; Nanver, Lis K.; Spirito, Marco;
    IEEE Transactions on Antennas and Propagation,
    Volume 61, Issue 12, pp. 5893-5901, 2013. DOI: 10.1109/TAP.2013.2281518

  37. Ultra-wide band CPW to substrate integrated waveguide (SIW) transition based on a U-shaped slot antenna
    Gentile, G.; Rejaei, B.; Jovanović, V.; Nanver, L.K.; de Vreede, L.C.N.; Spirito, M.;
    In 2013 European Microwave Integrated Circuit Conference,
    pp. 25-28, 2013.

  38. A 70W package-integrated class-E Chireix outphasing RF power amplifier
    Calvillo-Cortes, David A.; van der Heijden, Mark P.; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697341

  39. Non-intrusive characterization of active device interactions in high-efficiency power amplifiers
    Hou, Rui; Spirito, Marco; Gajadharsing, John; de Vreede, Leo C.N.;
    In 2013 IEEE MTT-S International Microwave Symposium Digest (MTT),
    pp. 1-3, 2013. DOI: 10.1109/MWSYM.2013.6697599

  40. Evaluation of HBT device linearity using advanced measurement techniques
    Buisman, K.; de Vreede, L. C. N.; Marchetti, M.; van der Heijden, M. P.; Zampardi, P. J.;
    In 2013 European Microwave Conference,
    pp. 259-262, 2013. DOI: 10.23919/EuMC.2013.6686640

  41. Device characterization for LTE applications with wideband baseband, fundamental and harmonic impedance control
    Manjanna, A. Kumar; Marchetti, M.; Buisman, K.; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.;
    In 2013 European Microwave Conference,
    pp. 255-258, 2013. DOI: 10.23919/EuMC.2013.6686639

  42. On the bandwidth performance of Doherty amplifiers
    de Vreede, L. C. N.; Gajadharsing, R.; Neo, W. C. E.;
    In 2013 IEEE International Wireless Symposium (IWS),
    pp. 1-4, 2013. DOI: 10.1109/IEEE-IWS.2013.6616839

  43. Synthesized pulsed bias for device characterization
    Kumar Manjanna, A.; Buisman, K.; Spirito, M.; Marchetti, M.; Pelk, M.; de Vreede, L. C. N.;
    In 81st ARFTG Microwave Measurement Conference,
    pp. 1-4, 2013. DOI: 10.1109/ARFTG.2013.6579031

  44. A 2×13-bit all-digital I/Q RF-DAC in 65-nm CMOS
    Alavi, Morteza S.; Voicu, George; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
    pp. 167-170, 2013. DOI: 10.1109/RFIC.2013.6569551

  45. On the Compression and Blocking Distortion of Semiconductor-Based Varactors
    Huang, Cong; Buisman, Koen; Zampardi, Peter J.; Larson, Lawrence E.; de Vreede, Leo C. N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 12, pp. 3699-3709, 2012. DOI: 10.1109/TMTT.2012.2221139

  46. All-Digital RF $I/Q$ Modulator
    Alavi, Morteza S.; Staszewski, Robert Bogdan; de Vreede, Leo C. N.; Visweswaran, Akshay; Long, John R.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 60, Issue 11, pp. 3513-3526, 2012. DOI: 10.1109/TMTT.2012.2211612

  47. RF Power Insensitive Varactors
    Buisman, Koen; Huang, Cong; Zampardi, Peter J.; de Vreede, Leo C. N.;
    IEEE Microwave and Wireless Components Letters,
    Volume 22, Issue 8, pp. 418-420, 2012. DOI: 10.1109/LMWC.2012.2206209

  48. Silicon integrated waveguide technology for mm-wave frequency scanning array
    G. Gentile; M. Spirito; L. C. N. de Vreede; B. Rejaei; R. Dekker; P. de Graaf;
    In 2012 7th European Microwave Integrated Circuit Conference,
    pp. 234-237, Oct 2012.

  49. Digital predistortion for dual-input Doherty amplifiers
    H. Cao; J. Qureshi; T. Eriksson; C. Fager; L. de Vreede;
    In 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications,
    pp. 45-48, Jan 2012.

  50. Contactless measurement of in-circuit reflection coefficients
    Rui Hou; Spirito, Marco; Kooij, Bert-Jan; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6259588

  51. On the design of package-integrated RF high-power amplifiers
    Calvillo-Cortes, David A.; Shi, Kanjun; de Langen, Michel; van Rijs, Fred; de Vreede, Leo C.N.;
    In 2012 IEEE/MTT-S International Microwave Symposium Digest,
    pp. 1-3, 2012. DOI: 10.1109/MWSYM.2012.6258272

  52. An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
    Yan, Han; Macias-Montero, Jose Gabriel; Akhnoukh, Atef; de Vreede, Leo C. N.; Long, John R.; Burghartz, Joachim N.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 59, Issue 5, pp. 1339-1349, 2011. DOI: 10.1109/TMTT.2011.2116037

  53. A 2-GHz digital I/Q modulator in 65-nm CMOS
    M. S. Alavi; A. Visweswaran; R. B. Staszewski; L. C. N. de Vreede; J. R. Long; A. Akhnoukh;
    In IEEE Asian Solid-State Circuits Conference 2011,
    pp. 277-280, Nov 2011.

  54. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
    M. S. Alavi; F. van Rijs; M. Marchetti; M. Squillante; T. Zhang; S. J. Theeuwen; Y. Volokhine; R. H. Jos; M. P. van der Heijden; M. Acar; L. C. de Vreede;
    In 2011 IEEE MTT-S International Microwave Symposium,
    pp. 1-1, June 2011.

  55. A compact and power-scalable 70W GaN class-E power amplifier operating from 1.7 to 2.6 GHz
    Calvillo-Cortes, David A.; de Vreede, Leo C.N.; de Langen, Michel;
    In Asia-Pacific Microwave Conference 2011,
    pp. 1546-1549, 2011.

  56. Orthogonal summing and power combining network in a 65-nm all-digital RF I/Q modulator
    Alavi, Morteza S.; Staszewski, Robert B.; de Vreede, Leo C. N.; Long, John R.;
    In 2011 IEEE International Symposium on Radio-Frequency Integration Technology,
    pp. 21-24, 2011. DOI: 10.1109/RFIT.2011.6141758

  57. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 6th European Microwave Integrated Circuit Conference,
    pp. 542-545, 2011.

  58. A compact 65W 1.7–2.3GHz class-E GaN power amplifier for base stations
    Shi, Kanjun; Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van Rijs, Fred;
    In 2011 41st European Microwave Conference,
    pp. 1103-1106, 2011. DOI: 10.23919/EuMC.2011.6101903

  59. A transformer for high-power RF applications using bondwires in parallel
    Calvillo-Cortes, David A.; de Vreede, Leo C. N.; van der Heijden, Mark P.;
    In 2011 41st European Microwave Conference,
    pp. 103-106, 2011. DOI: 10.23919/EuMC.2011.6101838

  60. Efficient LDMOS device operation for envelope tracking amplifiers through second harmonic manipulation
    Alavi, Morteza. S.; van Rijs, Fred; Marchetti, Mauro; Squillante, Michele; Zhang, Tao; Theeuwen, Steven J.C.H.; Volokhine, Yuri; Jos, H.F.F.; Heijden, Mark P. v. d.; Acar, Mustafa; de Vreede, Leo C.N.;
    In 2011 IEEE MTT-S International Microwave Symposium,
    pp. 1-4, 2011. DOI: 10.1109/MWSYM.2011.5972665

  61. A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
    Zhang, Ronghui; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine M. W.;
    In 2011 IEEE Radio Frequency Integrated Circuits Symposium,
    pp. 1-4, 2011. DOI: 10.1109/RFIC.2011.5940653

  62. A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz
    Calvillo-Cortes, David A.; Acar, Mustafa; van der Heijden, Mark P.; Apostolidou, Melina; de Vreede, Leo C. N.; Leenaerts, Domine; Sonsky, Jan;
    In 2011 IEEE International Solid-State Circuits Conference,
    pp. 58-60, 2011. DOI: 10.1109/ISSCC.2011.5746218

  63. Millimeter-wave integrated waveguides on silicon
    Gentile, G.; Dekker, R.; de Graaf, P.; Spirito, M.; de Vreede, L. C. N.; Rejaei, B.;
    In 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
    pp. 37-40, 2011. DOI: 10.1109/SIRF.2011.5719314

  64. Silicon Filled Integrated Waveguides
    Gentile, G.; Dekker, Ronald; de Graaf, Pascal; Spirito, M.; Pelk, M. J.; de Vreede, L. C. N.; Rejaei Salmassi, B.;
    IEEE Microwave and Wireless Components Letters,
    Volume 20, Issue 10, pp. 536-538, 2010. DOI: 10.1109/LMWC.2010.2063420

  65. A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
    Huang, Cong; Zampardi, Peter J.; Buisman, Koen; Cismaru, Cristian; Sun, Mike; Stevens, Kevin; Fu, Jianli; Marchetti, Mauro; de Vreede, Leo C. N.;
    IEEE Electron Device Letters,
    Volume 31, Issue 2, pp. 108-110, 2010. DOI: 10.1109/LED.2009.2037528

  66. The state-of-the-art of RF capacitive tunable components (Invited)
    Huang, Cong; Buisman, Koen; Nanver, Lis K.; de Vreede, Leo C. N.;
    In 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology,
    pp. 619-622, 2010. DOI: 10.1109/ICSICT.2010.5667304

  67. Design concepts for semiconductor based ultra-linear varactor circuits (invited)
    Huang, C.; Buisman, K.; Nanver, L. K.; Zampardi, P. J.; Larson, L. E.; de Vreede, L. C. N.;
    In 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 204-211, 2010. DOI: 10.1109/BIPOL.2010.5668027

  68. A wide-band 20W LMOS Doherty power amplifier
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  69. A multi-step phase calibration procedure for closely spaced multi-tone signals
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  70. A 120µW fully-integrated BPSK receiver in 90nm CMOS
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  71. Analysis and design of a wideband high efficiency CMOS outphasing amplifier
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  72. A mixed-signal load-pull system for base-station applications
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  73. Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
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  74. Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling
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  75. A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
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  76. Ultra Linear Low-Loss Varactor Diode Configurations for Adaptive RF Systems
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  77. A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
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  78. A mixed-signal approach for high-speed fully controlled multidimensional load-pull parameters sweep
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  79. Active scan-beam reflectarray antenna loaded with tunable capacitor
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  80. Active Harmonic Load–Pull With Realistic Wideband Communications Signals
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  81. A 67 dBm $OIP_3$ Multistacked Junction Varactor
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  82. A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
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  83. Enabling Low-Distortion Varactors for Adaptive Transmitters
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  84. Special RF/microwave devices in Silicon-on-Glass Technology
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  85. A highly efficient chireix amplifier using adaptive power combining
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  86. A low-distortion, low-loss varactor phase-shifter based on a silicon-on-glass technology
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  87. RF/microwave device fabrication in silicon-on-glass technology
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  88. 50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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  89. A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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  90. A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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  91. A low-cost pulsed RF I-V measurement setup for isothermal device characterization
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  92. A Low-Loss Compact Linear Varactor Based Phase-Shifter
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  93. Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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  94. Varactor element and low distortion varactor circuit arrangement
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  96. A pulsed network analyzer for high dynamic range isothermal measurements
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  97. Silicon-on-glass technology for RF and microwave device fabrication
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  98. A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
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  99. "Linearization Techniques at the Device and Circuit Level" (Invited)
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  100. Surface-passivated high-resistivity silicon as a true microwave substrate
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  101. “Distortion-Free” Varactor Diode Topologies for RF Adaptivity
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  102. Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
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  103. Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
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  104. High-performance varactor diodes integrated in a silicon-on-glass technology
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  105. Low-distortion, low-loss varactor-based adaptive matching networks, implemented in a silicon-on-glass technology
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  106. On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
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  107. Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
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  108. A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
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  109. Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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  110. Base-band impedance control and calibration for on-wafer linearity measurements
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  111. A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
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  112. On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
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  113. The electro-thermal Smoothie database model for LDMOS devices
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  114. A novel active harmonic load-pull setup for on-wafer device linearity characterization
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  115. Power amplifier PAE and ruggedness optimization by second-harmonic control
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  116. Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
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  117. A calibration procedure for on-wafer differential load-pull measurements
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  118. A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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  119. Design and characterization of integrated passive elements on high ohmic silicon
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  120. A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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  121. Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
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  123. Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
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  124. The effect of non-saturated electron drift velocity on bipolar device linearity
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  125. The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
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  126. Reduction of UHF power transistor distortion with a nonuniform collector doping profile
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  128. Isothermal Non-Linear Device Characterization
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  130. Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
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  131. Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
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  135. Optimisation of the base-collector doping profile for high-frequency distortion
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  137. MAIDS: A Microwave Active Integral Device Simulator
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  138. System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
    Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
    In Optical Fiber Communications, OFC.,
    pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319

  139. Extension of the collector charge description for compact bipolar epilayer models
    de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
    In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
    pp. 63-66, 1995.

  140. A figure of merit for the high-frequency noise behavior of bipolar transistors
    de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Journal of Solid-State Circuits,
    Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206

  141. A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
    de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058

  142. Advanced modelling of distortion effects in bipolar transistors using the Mextram model
    de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
    In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
    pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854

  143. A high frequency model based on the physical structure of the ceramic multilayer capacitor
    de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
    IEEE Transactions on Microwave Theory and Techniques,
    Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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