MSc S Malotaux

PhD student
Electronic Circuits and Architectures (ELCA), Department of Microelectronics

Expertise: mmWave ASIC Designer

Themes: mm-wave sensors

Biography

Working at TUSK-IC on the development of silicon integrated solutions from 10 GHz to 300 GHz and beyond.

Projects history

THz silicon-integrated camera for low-cost imaging applications

Develop a real-time multi pixel passive radiometer, operating between 0.1 THz and 1THz, integrated in a silicon based technology, with temperature resolution better than 1K

  1. Wideband Double Leaky Slot Lens Antennas in CMOS Technology at Submillimeter Wavelengths
    van Berkel, Sven; Malotaux, Eduard Satoshi; De Martino, Carmine; Spirito, Marco; Cavallo, Daniele; Neto, Andrea; Llombart, Nuria;
    IEEE Transactions on Terahertz Science and Technology,
    Volume 10, Issue 5, pp. 540-553, 2020. DOI: 10.1109/TTHZ.2020.3006750

  2. System NEP Verification of a Wideband THz Direct Detector in CMOS
    van Berkel, S.L.; Malotaux, E.S.; de Martino, C.; Spirito, M.; Cavallo, D.; Neto, A.; Llombart, N.;
    In 2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
    pp. 1-1, 2020. DOI: 10.1109/IRMMW-THz46771.2020.9370624

  3. Vector gain based EVM estimation at mm-wave frequencies
    Van ‘t Hof, J.; De Martino, C.; Malotaux, S.; Squillante, M.; Marchetti, M.; Galatro, L.; Spirito, M.;
    In 2020 95th ARFTG Microwave Measurement Conference (ARFTG),
    pp. 1-5, 2020. DOI: 10.1109/ARFTG47271.2020.9241384

  4. High Resolution Passive THz Imaging Array With Polarization Reusage in 22nm CMOS
    van Berkel, S. L.; Malotaux, E. S.; van den Bogert, B.; Spirito, M.; Cavallo, D.; Neto, A.; Llombart, N.;
    In 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
    pp. 1-2, 2019. DOI: 10.1109/IRMMW-THz.2019.8874183

  5. A TRL Error-box Split Procedure to Compensate for the Bias Dependency Effects in Device Test-Fixtures
    De Martino, C.; Malotaux, E.S.; Spirito, M.;
    In 2019 93rd ARFTG Microwave Measurement Conference (ARFTG),
    pp. 1-6, 2019. DOI: 10.1109/ARFTG.2019.8739197

  6. A Total-Power Radiometer Front End in a 0.25- $mu textm$ BiCMOS Technology With Low $1/f$ -Corner
    S. Malotaux; M. Babaie; M. Spirito;
    IEEE Journal of Solid-State Circuits,
    Volume 52, Issue 9, pp. 2256-2266, Sept 2017. DOI: 10.1109/JSSC.2017.2705659
    Keywords: ... 1/f noise;BiCMOS integrated circuits;Ge-Si alloys;carbon;low noise amplifiers;millimetre wave amplifiers;millimetre wave detectors;radiometers;semiconductor materials;white noise;1/f -noise corner;BiCMOS technology;LNA;NEP;SiGe:C;bandwidth 6 GHz;frequency 56 GHz;heterojunction bipolar transistor;high-sensitivity millimeter-wave total-power radiometer front-end;large area high resistive value load resistor;low noise-equivalent power;low transformation ratio;optimum bias;size 0.25 nm;two cascode stage low-noise amplifier;voltage-driven common-emitter square-law detector;white noise;wideband signal transfer;Antennas;Bandwidth;BiCMOS integrated circuits;Detectors;Radio frequency;Radiometry;Signal to noise ratio;Direct detection;flicker noise;low-noise amplifier (LNA);millimeter-wave (mm-wave);radiometer;square-law detector.

  7. Wideband single pixel radiometer in CMOS
    S. L. van Berkel; E. S. Malotaux; D. Cavallo; M. Spirito; A. Neto; N. Llombart;
    In 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
    pp. 1-2, Aug 2017. DOI: 10.1109/IRMMW-THz.2017.8067166
    Keywords: ... CMOS integrated circuits;broadband antennas;millimetre wave antennas;p-n junctions;radiometers;semiconductor diodes;submillimetre wave antennas;submillimetre wave detectors;CMOS technology;antenna-detector impedance mismatch;frequency 10.0 Hz;frequency 200.0 GHz to 600.0 GHz;passive uncooled radiometer pixel;pn-junction diode;size 28.0 nm;temperature 2.6 K;uncooled imaging capabilities;wideband antenna;wideband single pixel radiometer;Antennas;Detectors;Imaging;Lenses;Radiometry;Schottky diodes;Silicon.

  8. A linearization technique for bipolar amplifiers based on derivative superposition
    D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
    In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901

  9. Characterization of broadband low-NEP SiGe square-law detectors for mm-wave passive imaging
    E. S. Malotaux; M. Spirito;
    In 2016 IEEE MTT-S International Microwave Symposium (IMS),
    pp. 1-4, May 2016.

  10. A passive total power radiometer in 0.25 #x00B5;m SiGe BiCMOS for millimeter-wave imaging
    E. S. Malotaux; M. Spirito;
    In 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
    pp. 118-121, Sept 2016.

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Last updated: 17 May 2023